LND150N3-G-P002

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Overview of LND150N3-G-P002

Part NumberLND150N3-G-P002
ManufacturerMicrochip Technology
DescriptionMOSFET N-CH 500V 30MA TO92-3
DatasheetsDownload LND150N3-G-P002 Datasheet PDFPDF Icon
Price for LND150N3-G-P002

Specification of LND150N3-G-P002

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0V
Rds On (Max) @ Id, Vgs
1000Ohm @ 500A, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
10 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
740mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)

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