LSIC1MO120T0160-TU

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Overview of LSIC1MO120T0160-TU

Part NumberLSIC1MO120T0160-TU
ManufacturerLittelfuse
Description1200V/160MOHM SIC MOSFET TO-263-
DatasheetsDownload LSIC1MO120T0160-TU Datasheet PDFPDF Icon
Price for LSIC1MO120T0160-TU

Specification of LSIC1MO120T0160-TU

Status
Active
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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