MBR600200CTR

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Overview of MBR600200CTR

Part NumberMBR600200CTR
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SCHOTTKY 200V 300A 2 TOWER
DatasheetsDownload MBR600200CTR Datasheet PDFPDF Icon
Price for MBR600200CTR

Specification of MBR600200CTR

Status
Active
Package
Bulk
Supplier
GeneSiC Semiconductor
Diode Configuration
1 Pair Common Anode
Technology
Schottky
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io) (per Diode)
300A
Voltage - Forward (Vf) (Max) @ If
920 mV @ 300 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
3 mA @ 200 V
Operating Temperature - Junction
-55C ~ 150C
Mounting Type
Chassis Mount
Package / Case
Twin Tower
Supplier Device Package
Twin Tower

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