MCB60I1200TZ

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Overview of MCB60I1200TZ

Part NumberMCB60I1200TZ
ManufacturerLittelfuse
Description1200V 90A SIC POWER MOSFET
DatasheetsDownload MCB60I1200TZ Datasheet PDFPDF Icon
Price for MCB60I1200TZ

Specification of MCB60I1200TZ

Status
Obsolete
Package
Tube
Supplier
IXYS
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2790 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268AA (D3Pak-HV)
Package / Case
TO-268-3, DPak (2 Leads + Tab), TO-268AA

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