MCQ3779-TP

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Overview of MCQ3779-TP

Part NumberMCQ3779-TP
ManufacturerMicro Commercial Components (MCC)
DescriptionMCQ3779-TP
DatasheetsDownload MCQ3779-TP Datasheet PDFPDF Icon
Price for MCQ3779-TP

Specification of MCQ3779-TP

Status
Obsolete
Package
Bulk
Supplier
Micro Commercial Co
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
3.4A, 4A
Rds On (Max) @ Id, Vgs
130mOhm @ 5A, 10V, 200mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15.5nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 25V, 1055pF @ 25V
Power - Max
2W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP

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