MS2N5116

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of MS2N5116

Part NumberMS2N5116
ManufacturerMicrochip Technology
DescriptionJFET P-CH 30V TO18
Price for MS2N5116

Specification of MS2N5116

Status
Active
Package
Bulk
Supplier
Microchip Technology
FET Type
P-Channel
Voltage - Breakdown (V(BR)GSS)
30 V
Drain to Source Voltage (Vdss)
30 V
Current - Drain (Idss) @ Vds (Vgs=0)
5 mA @ 15 V
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds
27pF @ 15V
Resistance - RDS(On)
175 Ohms
Power - Max
500 mW
Operating Temperature
-65C ~ 200C (TJ)
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Supplier Device Package
TO-18 (TO-206AA)

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