MSC360SMA120SA

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Overview of MSC360SMA120SA

Part NumberMSC360SMA120SA
ManufacturerMicrochip Technology
DescriptionMOSFET SIC 1200 V 360 MOHM TO-26
Price for MSC360SMA120SA

Specification of MSC360SMA120SA

Status
Active
Package
Tube
Supplier
Microchip Technology
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
450mOhm @ 5A, 20V
Vgs(th) (Max) @ Id
3.14V @ 250A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
255 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
-
Supplier Device Package
-
Package / Case
-

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