MSCSM120AM02T6LIAG

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Overview of MSCSM120AM02T6LIAG

Part NumberMSCSM120AM02T6LIAG
ManufacturerMicrochip Technology
DescriptionPM-MOSFET-SIC-SP6L1
DatasheetsDownload MSCSM120AM02T6LIAG Datasheet PDFPDF Icon
Price for MSCSM120AM02T6LIAG

Specification of MSCSM120AM02T6LIAG

Status
Active
Package
Bulk
Supplier
Microchip Technology
Technology
Silicon Carbide (SiC)
Configuration
2 N Channel (Phase Leg)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
947A (Tc)
Rds On (Max) @ Id, Vgs
2.6mOhm @ 480A, 20V
Vgs(th) (Max) @ Id
2.8V @ 36mA
Gate Charge (Qg) (Max) @ Vgs
2784nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
36200pF @ 1000V
Power - Max
3.75kW (Tc)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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