MSCSM120TAM31T3AG

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Overview of MSCSM120TAM31T3AG

Part NumberMSCSM120TAM31T3AG
ManufacturerMicrochip Technology
DescriptionPM-MOSFET-SIC-SP3F
DatasheetsDownload MSCSM120TAM31T3AG Datasheet PDFPDF Icon
Price for MSCSM120TAM31T3AG

Specification of MSCSM120TAM31T3AG

Status
Active
Package
Bulk
Supplier
Microchip Technology
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
89A (Tc)
Rds On (Max) @ Id, Vgs
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
3020pF @ 1000V
Power - Max
395W (Tc)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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