MT3S111TU,LF

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Overview of MT3S111TU,LF

Part NumberMT3S111TU,LF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionRF SIGE NPN BIPOLAR TRANSISTOR N
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Price for MT3S111TU,LF

Specification of MT3S111TU,LF

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
10GHz
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain
12.5dB
Power - Max
800mW
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Supplier Device Package
UFM

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