MTP6P20E

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Overview of MTP6P20E

Part NumberMTP6P20E
Manufactureronsemi
DescriptionMOSFET P-CH 200V 6A TO220AB
DatasheetsDownload MTP6P20E Datasheet PDFPDF Icon
Price for MTP6P20E

Specification of MTP6P20E

Status
Obsolete
Package
Tube,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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