MURT20060R

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Overview of MURT20060R

Part NumberMURT20060R
ManufacturerGeneSiC Semiconductor
DescriptionDIODE MODULE 600V 100A 3TOWER
DatasheetsDownload MURT20060R Datasheet PDFPDF Icon
Price for MURT20060R

Specification of MURT20060R

Status
Active
Package
Bulk
Supplier
GeneSiC Semiconductor
Diode Configuration
1 Pair Common Anode
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io) (per Diode)
100A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 100 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
160 ns
Current - Reverse Leakage @ Vr
25 A @ 50 V
Operating Temperature - Junction
-55C ~ 150C
Mounting Type
Chassis Mount
Package / Case
Three Tower
Supplier Device Package
Three Tower

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