N0600N-S17-AY

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Overview of N0600N-S17-AY

Part NumberN0600N-S17-AY
ManufacturerRenesas Electronics America
DescriptionMOSFET N-CH 60V 30A TO220
DatasheetsDownload N0600N-S17-AY Datasheet PDFPDF Icon
Price for N0600N-S17-AY

Specification of N0600N-S17-AY

Status
Obsolete
Package
Tube
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
36mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
29.8 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 20W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3 Isolated Tab

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