NDBA180N10BT4H

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Overview of NDBA180N10BT4H

Part NumberNDBA180N10BT4H
Manufactureronsemi
DescriptionMOSFET N-CH 100V 180A D2PAK
Price for NDBA180N10BT4H

Specification of NDBA180N10BT4H

Status
Obsolete
Package
Tape & Reel (TR),Bulk
Supplier
onsemi,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
180A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V, 15V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6950 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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