NDD02N40-1G

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Overview of NDD02N40-1G

Part NumberNDD02N40-1G
Manufactureronsemi
DescriptionMOSFET N-CH 400V 1.7A IPAK
DatasheetsDownload NDD02N40-1G Datasheet PDFPDF Icon
Price for NDD02N40-1G

Specification of NDD02N40-1G

Status
Obsolete
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25C
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
121 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-Pak
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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