NDDP010N25AZ-1H

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Overview of NDDP010N25AZ-1H

Part NumberNDDP010N25AZ-1H
Manufactureronsemi
DescriptionMOSFET N-CH 250V 10A IPAK/TP
DatasheetsDownload NDDP010N25AZ-1H Datasheet PDFPDF Icon
Price for NDDP010N25AZ-1H

Specification of NDDP010N25AZ-1H

Status
Obsolete
Package
Bulk,Bag
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 52W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK/TP
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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