NDH8521C

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Overview of NDH8521C

Part NumberNDH8521C
ManufacturerFairchild Semiconductor
DescriptionP-CHANNEL MOSFET
DatasheetsDownload NDH8521C Datasheet PDFPDF Icon
Price for NDH8521C

Specification of NDH8521C

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
3.8A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs
33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V, 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
500pF @ 15V, 560pF @ 15V
Power - Max
800mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSOP (0.130", 3.30mm Width)
Supplier Device Package
SuperSOT-8

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