NDT451AN

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Overview of NDT451AN

Part NumberNDT451AN
ManufacturerFairchild Semiconductor
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 7
DatasheetsDownload NDT451AN Datasheet PDFPDF Icon
Price for NDT451AN

Specification of NDT451AN

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3W (Ta)
Operating Temperature
-65C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA

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