NESG3031M14-T3-A

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Overview of NESG3031M14-T3-A

Part NumberNESG3031M14-T3-A
ManufacturerRenesas Electronics America
DescriptionRF SMALL SIGNAL TRANSISTOR
DatasheetsDownload NESG3031M14-T3-A Datasheet PDFPDF Icon
Price for NESG3031M14-T3-A

Specification of NESG3031M14-T3-A

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
4.3V
Frequency - Transition
-
Noise Figure (dB Typ @ f)
0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
Gain
7.5dB ~ 16dB
Power - Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 6mA, 2V
Current - Collector (Ic) (Max)
35mA
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
4-SMD, Flat Leads
Supplier Device Package
4L2MM, M14

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