NP83P04PDG-E1-AY

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Overview of NP83P04PDG-E1-AY

Part NumberNP83P04PDG-E1-AY
ManufacturerRenesas Electronics America
DescriptionMOSFET P-CH 40V 83A TO-263
DatasheetsDownload NP83P04PDG-E1-AY Datasheet PDFPDF Icon
Price for NP83P04PDG-E1-AY

Specification of NP83P04PDG-E1-AY

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Renesas Electronics America Inc
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
5.3mOhm @ 41.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
9820 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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