NP89N04PUK-E1-AY

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Overview of NP89N04PUK-E1-AY

Part NumberNP89N04PUK-E1-AY
ManufacturerRenesas Electronics America
DescriptionNP89N04P - MOSFET Channel Single
DatasheetsDownload NP89N04PUK-E1-AY Datasheet PDFPDF Icon
Price for NP89N04PUK-E1-AY

Specification of NP89N04PUK-E1-AY

Status
Active
Series
Automotive, AEC-Q101
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.95mOhm @ 45A, 5V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5850 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 147W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
TO-263-3
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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