NSVB114YPDXV6T1G

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Overview of NSVB114YPDXV6T1G

Part NumberNSVB114YPDXV6T1G
Manufactureronsemi
DescriptionTRANS BRT 50V 100MA SOT563
DatasheetsDownload NSVB114YPDXV6T1G Datasheet PDFPDF Icon
Price for NSVB114YPDXV6T1G

Specification of NSVB114YPDXV6T1G

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
onsemi
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300A, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563

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