NSVMUN5116T1G-M02

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Overview of NSVMUN5116T1G-M02

Part NumberNSVMUN5116T1G-M02
Manufactureronsemi
DescriptionNSVMUN5116 - DIGITAL BJT PNP - P
Price for NSVMUN5116T1G-M02

Specification of NSVMUN5116T1G-M02

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
202 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SC-70-3 (SOT323)

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