NTB13N10G

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Overview of NTB13N10G

Part NumberNTB13N10G
Manufactureronsemi
DescriptionMOSFET N-CH 100V 13A D2PAK
DatasheetsDownload NTB13N10G Datasheet PDFPDF Icon
Price for NTB13N10G

Specification of NTB13N10G

Status
Obsolete
Package
Tube,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
64.7W (Ta)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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