NTBL045N065SC1

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Overview of NTBL045N065SC1

Part NumberNTBL045N065SC1
Manufactureronsemi
DescriptionSILICON CARBIDE (SIC) MOSFET - 3
DatasheetsDownload NTBL045N065SC1 Datasheet PDFPDF Icon
Price for NTBL045N065SC1

Specification of NTBL045N065SC1

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
50mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
4.3V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 325 V
FET Feature
-
Power Dissipation (Max)
348W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HPSOF
Package / Case
8-PowerSFN

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