NTBS9D0N10MC

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Overview of NTBS9D0N10MC

Part NumberNTBS9D0N10MC
Manufactureronsemi
DescriptionMOSFET N-CH 100V 14A/60A TO263
DatasheetsDownload NTBS9D0N10MC Datasheet PDFPDF Icon
Price for NTBS9D0N10MC

Specification of NTBS9D0N10MC

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
14A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
4V @ 131A
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1695 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 68W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK-3 (TO-263-3)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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