NTC040N120SC1

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Overview of NTC040N120SC1

Part NumberNTC040N120SC1
Manufactureronsemi
DescriptionSIC MOS WAFER SALES 40MOHM 1200V
DatasheetsDownload NTC040N120SC1 Datasheet PDFPDF Icon
Price for NTC040N120SC1

Specification of NTC040N120SC1

Status
Active
Package
Tray
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1781 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
348W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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