NTC080N120SC1

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Overview of NTC080N120SC1

Part NumberNTC080N120SC1
Manufactureronsemi
DescriptionSIC MOS WAFER SALES 80MOHM 1200V
DatasheetsDownload NTC080N120SC1 Datasheet PDFPDF Icon
Price for NTC080N120SC1

Specification of NTC080N120SC1

Status
Obsolete
Package
Tray
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1112 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
178W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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