NTD4857NA-1G

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Overview of NTD4857NA-1G

Part NumberNTD4857NA-1G
Manufactureronsemi
DescriptionMOSFET N-CH 25V 12A/78A IPAK
Price for NTD4857NA-1G

Specification of NTD4857NA-1G

Status
Obsolete
Package
Tube,Tube
Supplier
onsemi,Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
600mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-UDFN (1.6x1.6)
Package / Case
6-PowerUFDFN

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