NTD4906N-35G

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Overview of NTD4906N-35G

Part NumberNTD4906N-35G
Manufactureronsemi
DescriptionMOSFET N-CH 30V 10.3A/54A IPAK
DatasheetsDownload NTD4906N-35G Datasheet PDFPDF Icon
Price for NTD4906N-35G

Specification of NTD4906N-35G

Status
Obsolete
Package
Tube,Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
9A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
25.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1650 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
910mW (Ta), 25.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case
8-PowerTDFN, 5 Leads

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