NTD5C632NLT4G

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Overview of NTD5C632NLT4G

Part NumberNTD5C632NLT4G
Manufactureronsemi
DescriptionT6 60V LL DPAK
DatasheetsDownload NTD5C632NLT4G Datasheet PDFPDF Icon
Price for NTD5C632NLT4G

Specification of NTD5C632NLT4G

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
29A (Ta), 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 4.5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
4W (Ta), 115W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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