NTE2973

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Overview of NTE2973

Part NumberNTE2973
ManufacturerNTE Electronics, Inc
DescriptionMOSFET-N-CHAN ENHANCEMENT TO-3P
DatasheetsDownload NTE2973 Datasheet PDFPDF Icon
Price for NTE2973

Specification of NTE2973

Status
Active
Package
Bag
Supplier
NTE Electronics, Inc
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
275W (Tc)
Operating Temperature
-55C ~ 150C
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3

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