NTP8G202NG

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Overview of NTP8G202NG

Part NumberNTP8G202NG
Manufactureronsemi
DescriptionGANFET N-CH 600V 9A TO220-3
DatasheetsDownload NTP8G202NG Datasheet PDFPDF Icon
Price for NTP8G202NG

Specification of NTP8G202NG

Status
Obsolete
Package
Tube,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V
Rds On (Max) @ Id, Vgs
350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500A
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Vgs (Max)
18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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