NTQD6866R2G

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Overview of NTQD6866R2G

Part NumberNTQD6866R2G
Manufactureronsemi
DescriptionMOSFET 2N-CH 20V 4.7A 8TSSOP
DatasheetsDownload NTQD6866R2G Datasheet PDFPDF Icon
Price for NTQD6866R2G

Specification of NTQD6866R2G

Status
Obsolete
Package
Tape & Reel (TR),Bulk
Supplier
onsemi,Rochester Electronics, LLC
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25C
4.7A
Rds On (Max) @ Id, Vgs
32mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 16V
Power - Max
940mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP

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