NTTFS1D2N02P1E

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Overview of NTTFS1D2N02P1E

Part NumberNTTFS1D2N02P1E
Manufactureronsemi
DescriptionMOSFET N-CH 25V 23A/180A 8PQFN
DatasheetsDownload NTTFS1D2N02P1E Datasheet PDFPDF Icon
Price for NTTFS1D2N02P1E

Specification of NTTFS1D2N02P1E

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
23A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
2V @ 934A
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 4.5 V
Vgs (Max)
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds
4040 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
820mW (Ta), 52W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (3.3x3.3)
Package / Case
8-PowerWDFN

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