NTTFS5116PLTWG

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Overview of NTTFS5116PLTWG

Part NumberNTTFS5116PLTWG
Manufactureronsemi
DescriptionMOSFET P-CH 60V 5.7A 8WDFN
DatasheetsDownload NTTFS5116PLTWG Datasheet PDFPDF Icon
Price for NTTFS5116PLTWG

Specification of NTTFS5116PLTWG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
52mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1258 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.2W (Ta), 40W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WDFN (3.3x3.3)
Package / Case
8-PowerWDFN

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