NTVS3141PT2G

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Overview of NTVS3141PT2G

Part NumberNTVS3141PT2G
Manufactureronsemi
DescriptionMOSFET P-CH 20V CSP-6
Price for NTVS3141PT2G

Specification of NTVS3141PT2G

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Rds On (Max) @ Id, Vgs
38mOhm @ 3A, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22.3 nC @ 4 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
1484 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
UFM
Package / Case
3-SMD, Flat Leads

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