NVB190N65S3

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Overview of NVB190N65S3

Part NumberNVB190N65S3
Manufactureronsemi
DescriptionMOSFET N-CH 650V 20A D2PAK-3
Price for NVB190N65S3

Specification of NVB190N65S3

Status
Active
Series
Automotive, AEC-Q101, SuperFET® III
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 430A
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1605 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
162W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK-3 (TO-263-3)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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