NVBG080N120SC1

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Overview of NVBG080N120SC1

Part NumberNVBG080N120SC1
Manufactureronsemi
DescriptionSICFET N-CH 1200V 30A D2PAK-7
DatasheetsDownload NVBG080N120SC1 Datasheet PDFPDF Icon
Price for NVBG080N120SC1

Specification of NVBG080N120SC1

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1154 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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