NVD5863NLT4G

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Overview of NVD5863NLT4G

Part NumberNVD5863NLT4G
Manufactureronsemi
DescriptionMOSFET N-CH 60V 14.9A DPAK
DatasheetsDownload NVD5863NLT4G Datasheet PDFPDF Icon
Price for NVD5863NLT4G

Specification of NVD5863NLT4G

Status
Obsolete
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
onsemi,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
14.9A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.1mOhm @ 41A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3850 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 96W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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