NVJS3151PT1G

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Overview of NVJS3151PT1G

Part NumberNVJS3151PT1G
Manufactureronsemi
DescriptionMOSFET P-CH 12V 2.7A SC88
DatasheetsDownload NVJS3151PT1G Datasheet PDFPDF Icon
Price for NVJS3151PT1G

Specification of NVJS3151PT1G

Status
Obsolete
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Bulk
Supplier
onsemi,Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 100A
Gate Charge (Qg) (Max) @ Vgs
8.6 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
850 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
625mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-88/SC70-6/SOT-363
Package / Case
6-TSSOP, SC-88, SOT-363

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