NVMFD5C650NLT1G

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Overview of NVMFD5C650NLT1G

Part NumberNVMFD5C650NLT1G
Manufactureronsemi
DescriptionMOSFET 2N-CH 60V 111A S08FL
DatasheetsDownload NVMFD5C650NLT1G Datasheet PDFPDF Icon
Price for NVMFD5C650NLT1G

Specification of NVMFD5C650NLT1G

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 98A
Gate Charge (Qg) (Max) @ Vgs
16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
2546pF @ 25V
Power - Max
3.5W (Ta), 125W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (5x6) Dual Flag (SO8FL-Dual)

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