NVMFS2D3P04M8LT1G

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Overview of NVMFS2D3P04M8LT1G

Part NumberNVMFS2D3P04M8LT1G
Manufactureronsemi
DescriptionMV8 P INITIAL PROGRAM
DatasheetsDownload NVMFS2D3P04M8LT1G Datasheet PDFPDF Icon
Price for NVMFS2D3P04M8LT1G

Specification of NVMFS2D3P04M8LT1G

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
31A (Ta), 222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.4V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5985 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 205W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case
8-PowerTDFN, 5 Leads

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