NVMFS5832NLWFT1G

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Overview of NVMFS5832NLWFT1G

Part NumberNVMFS5832NLWFT1G
Manufactureronsemi
DescriptionMOSFET N-CH 40V 21A 5DFN
DatasheetsDownload NVMFS5832NLWFT1G Datasheet PDFPDF Icon
Price for NVMFS5832NLWFT1G

Specification of NVMFS5832NLWFT1G

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 127W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case
8-PowerTDFN, 5 Leads

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