NVMFWS9D6P04M8LT1G

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Overview of NVMFWS9D6P04M8LT1G

Part NumberNVMFWS9D6P04M8LT1G
Manufactureronsemi
DescriptionMV8 P-CH 40V SO-8FL PORTFOLIO EX
Price for NVMFWS9D6P04M8LT1G

Specification of NVMFWS9D6P04M8LT1G

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
17.1A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.4V @ 580A
Gate Charge (Qg) (Max) @ Vgs
14.47 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2002 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3.7W (Ta), 75W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case
8-PowerTDFN, 5 Leads

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