NVMYS3D3N06CLTWG

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Overview of NVMYS3D3N06CLTWG

Part NumberNVMYS3D3N06CLTWG
Manufactureronsemi
DescriptionMOSFET N-CH 60V 26A/133A 4LFPAK
DatasheetsDownload NVMYS3D3N06CLTWG Datasheet PDFPDF Icon
Price for NVMYS3D3N06CLTWG

Specification of NVMYS3D3N06CLTWG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
40.7 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.9W (Ta), 100W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK4 (5x6)
Package / Case
SOT-1023, 4-LFPAK

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