NVTFS6H888NTAG

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Overview of NVTFS6H888NTAG

Part NumberNVTFS6H888NTAG
Manufactureronsemi
DescriptionMOSFET N-CH 80V 4.7A/12A 8WDFN
DatasheetsDownload NVTFS6H888NTAG Datasheet PDFPDF Icon
Price for NVTFS6H888NTAG

Specification of NVTFS6H888NTAG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
4.7A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 15A
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
2.9W (Ta), 18W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WDFN (3.3x3.3)
Package / Case
8-PowerWDFN

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