NVTYS029N08HTWG

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Overview of NVTYS029N08HTWG

Part NumberNVTYS029N08HTWG
Manufactureronsemi
DescriptionT8 80V N-CH SG IN LFPAK33
DatasheetsDownload NVTYS029N08HTWG Datasheet PDFPDF Icon
Price for NVTYS029N08HTWG

Specification of NVTYS029N08HTWG

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
6.4A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
32.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 20A
Gate Charge (Qg) (Max) @ Vgs
6.3 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
369 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 33W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-LFPAK
Package / Case
SOT-1205, 8-LFPAK56

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