NXH040F120MNF1PG

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Overview of NXH040F120MNF1PG

Part NumberNXH040F120MNF1PG
Manufactureronsemi
DescriptionPIM F1 SIC FULL BRIDGE 1200V 40M
DatasheetsDownload NXH040F120MNF1PG Datasheet PDFPDF Icon
Price for NXH040F120MNF1PG

Specification of NXH040F120MNF1PG

Status
Active
Package
Tray
Supplier
onsemi
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Rds On (Max) @ Id, Vgs
56mOhm @ 25A, 20V
Vgs(th) (Max) @ Id
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
122.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
1505pF @ 800V
Power - Max
74W (Tj)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
22-PIM (33.8x42.5)

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