NXPSC126506Q

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Overview of NXPSC126506Q

Part NumberNXPSC126506Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARB 650V 12A TO220AC
Price for NXPSC126506Q

Specification of NXPSC126506Q

Status
Last Time Buy
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
80 A @ 650 V
Capacitance @ Vr, F
380pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
175C (Max)

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